About the position
PostDoc (m/f/d)
Creating spin-polarized two-dimensional hole gases in nitride heterostructures
Can high hole densities indeed induce room-temperature ferromagnetism in GaN?
This prediction, made by the p-d Zener model, has not been really tested due to the difficulty in achieving sufficiently high hole densities in GaN. In this project, the successful candidate will answer this scientifically intriguing and technologically significant question by utilizing polarization-induced two-dimensional hole gases formed in Mn-delta-doped nitride heterostructures.
These structures will be grown using molecular-beam epitaxy. Achieving ferromagnetism in such systems could significantly impact the development of multi-functional advanced devices on well-established nitride-based platforms.
This advancement will lead to new types of memory devices, logic circuits, and quantum computing elements with enhanced performance and new functionalities.