About the position
PhD student (m/f/d) -
Molecular-beam epitaxy of novel nitride heterostructures exploiting polarization engineering
Wurtzite group III-nitride semiconductor heterostructures exhibit strong spontaneous and piezoelectric polarization fields on the order of a few MV/cm along the polar c-axis. Polarization engineering in these heterostructures offers innovative building blocks for photonic and electronic devices.
In this project, the successful candidate will work on the design and molecular beam epitaxy of polar group III-nitride heterostructures for novel electronic devices utilizing polarization engineering.
Particularly interesting in this context are N-polar GaN/AlN high-electron-mobility transistors on Si. Such structures offer significant advantages over their conventional Ga-polar counterparts for high-power and high-frequency applications due to their scalability, low contact resistance, improved gate control of the 2D electron gases, low substrate cost, and compatibility with the existing Si CMOS technology.