Master Thesis in Epitaxy
Master Thesis - Distributed polarization doping of group-III nitride alloys by molecular beam epitaxy
Wurtzite group III-nitride semiconductor heterostructures exhibit strong spontaneous and piezoelectric polarization fields on the order of a few MV/cm along the polar c-axis. As electrostatics dictates, when polarization changes in space, corresponding polarization charges are induced at those locations. These polarization charges can be utilized for band diagram engineering of polar-nitride heterostructures for various purposes, including 2D electron gas formation and tunnel junctions. In this MSc thesis study, the successful candidate will work on distributed polarization doping of group-III nitride alloys to develop optimal growth recipes for such alloys at PDI. If time permits, an attempt will be made to demonstrate a polarization-induced dopant-free graded AlxGa1-xN p-n junction.