About the position
Thermal laser epitaxy (TLE) is an emerging thin film growth technology with the
potential tooutperform state-of-the-art thin film synthesis techniques.
To make this method accessibleto a wide range of users and realize its commercial
potential, PDI received funding toestablish the ‘Application Lab Thermal Laser Epitaxy’
(ATLAS). One relevant area ofresearch is the growth and doping of aluminum nitride
(AlN), a semiconductor with an ultra-wide band gap. The epitaxial growth and p-type
doping of AlN films are extremelychallenging processes. The successful candidate will
pioneer the experimental growthactivities to synthesize device-grade, conductive AlN
films using TLE. This will beaccomplished by exploring a new growth parameter space
for AlN thin film synthesis. Thepostdoc's research will benefit from interactions with
ongoing research activities at PDI, aswell as from national and international
collaborations. Additional responsibilities mayinclude mentoring graduate and
undergraduate students, as well as contributing to grantproposals and project reports.
